Emerging 800 V DC architectures for AI data centres are driving new power system and device requirements. The data centre power distribution is working on removing power conversion stages and supplying high voltage closer to the racks. To meet this, the high-voltage PSU is being required to shrink, and become more efficient, while also converting 800 V down to 50, 12, or even six, all while maintaining safety isolation. This in turn demands the power device switching at higher frequencies while improving the figure of merit (gate charge, output charge, etc).

This is where GaN shines as the correct power device for the future. With much lower gate drive requirements than SiC or silicon, gate driving losses are reduced. With compact, low-profile, top-side-cooled packages, the devices can run cooler at higher power levels. CGD's monolithic ICeGaN® technology goes even further, integrating more functionality onto the device and therefore fewer external parts. It includes system monitoring through features like DESAT and temperature sensing to ensure reliability.  Together, these advantages deliver exactly what next-generation PSUs need: extreme power density and efficiency at 800V.